REGISTER | LOGIN
Breaking News
News & Analysis

Startup tapes out MRAM-based MCU demo for IoT

1/5/2018 00:01 AM EST
3 comments
NO RATINGS
1 saves
More Related Links
View Comments: Newest First | Oldest First | Threaded View
resistion
User Rank
Author
Re: Inaccuracies
resistion   1/5/2018 4:11:49 AM
The spec is listed for 22FDX: https://www.globalfoundries.com/sites/default/files/product-briefs/pb-envm-10-web.pdf 1M cycles for flash applications (1T1M), 100M cycles for SRAM applications (2T2M)  

ip2design
User Rank
Author
Re: Inaccuracies
ip2design   1/5/2018 4:07:49 AM
NO RATINGS
That's right, no charge involved here. This is magneto-resistive technology and any bit is defined thanks to the relative magnetic spin rientation  of one layer to a reference one. It seems that STT MRAM has made huge progress when considering cycling and retention.  

resistion
User Rank
Author
Inaccuracies
resistion   1/5/2018 2:32:28 AM
There are a number of inaccuracies in this article, such as referring to "magnetic charges" when should be referring to spin. Also MRAM also uses electrical circuits. and the eVaderis MCU would not use magnetic fields.

Like Us on Facebook
EE Times on Twitter
EE Times Twitter Feed